Staircase Band Gap Si _1-xGe_x/Si Photodectectors

Authors

Zhiyun Lo
Ruolian Jiang
Youdou Zheng
Lan Zang
Zhizhong Chen
Shunming Zhu
Xuemei Cheng, Bryn Mawr CollegeFollow
Xiabing Liu

Document Type

Article

Version

Publisher's PDF

Publication Title

Applied Physics Letters

Volume

77

Publication Date

2000

Abstract

We fabricated Si _1-xGe_x/Si photodetectors by using a staircase band gap Si _1-xGe_x/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at -5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm² at V bias, and the breakdown voltage is -27 V. The high response is explained as the result of a staircase band gap by theoretical analysis.

Publisher's Statement

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 77, 1548 (2000), and may be found at http://apl.aip.org/resource/1/applab/v77/i10/p1548_s1.

Citation

Z. Y. Lo et al., Appl. Phys. Lett. 77, 1548 (2000).

DOI

10.1063/1.1286958