Applied Physics Letters
We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1-x-yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and the wet oxidized at 1100 °C for 20 min. The photoluminescence band with a peak at ~393 nm under the exciting radiation of λ = 241 nm was observed. Possible mechanism of this photoluminescence is discussed.
Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 75, 3333 (1999), and may be found at http://apl.aip.org/resource/1/applab/v75/i21/p3333_s1.
X. M. Cheng et al., Appl. Phys. Lett. 75, 3333 (1999).