Room-Temperature Blue Luminescence of Thermally Oxidized Si_1-x-yGe_xC_y Thin Films on Si (100) Substrates

Authors

Xuemei Cheng, Bryn Mawr CollegeFollow
Youdou Zheng
Xiabing Liu
Lan Zang
Zhiyun Lo
Shunming Zhu
Ping Han
Ruolian Jiang

Document Type

Article

Version

Publisher's PDF

Publication Title

Applied Physics Letters

Volume

75

Publication Date

1999

Abstract

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si_1-x-yGe_xC_y thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and the wet oxidized at 1100 °C for 20 min. The photoluminescence band with a peak at ~393 nm under the exciting radiation of λ = 241 nm was observed. Possible mechanism of this photoluminescence is discussed.

Publisher's Statement

Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 75, 3333 (1999), and may be found at http://apl.aip.org/resource/1/applab/v75/i21/p3333_s1.

Citation

X. M. Cheng et al., Appl. Phys. Lett. 75, 3333 (1999).

DOI

10.1063/1.125342