Document Type
Article
Version
Publisher's PDF
Publication Title
Applied Physics Letters
Volume
77
Publication Date
2000
Abstract
We fabricated Si 1-xGex/Si photodetectors by using a staircase band gap Si 1-xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at -5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm2 at V bias, and the breakdown voltage is -27 V. The high response is explained as the result of a staircase band gap by theoretical analysis.
Publisher's Statement
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 77, 1548 (2000), and may be found at http://apl.aip.org/resource/1/applab/v77/i10/p1548_s1.
Citation
Z. Y. Lo et al., Appl. Phys. Lett. 77, 1548 (2000).
DOI
10.1063/1.1286958